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| BFT 93 PNP Silicon RF Transistor * For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFT 93 X1s Q62702-F1063 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 15 2 35 3 mW 300 150 - 65 ... + 150 - 65 ... + 150 305 C mA Unit V VCEO VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS 58 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-12-1996 BFT 93 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 60 - V nA 50 A 10 20 - IC = 1 mA, IB = 0 Collector-base cutoff current ICBO IEBO hFE VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V Semiconductor Group 2 Dec-12-1996 BFT 93 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 4 5.5 0.8 0.28 1.6 - GHz pF 1.3 dB 2.7 4.6 - IC = 30 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 2 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain 2) Gma IC = 30 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 10 5 11.5 6.5 - IC = 30 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-12-1996 BFT 93 SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 1.0366 fA VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 8.4866 1.3702 9.5149 1.038 2.0822 20.636 54.303 3.0573 1.0282 0.34233 0 3 V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 80 0.47497 16.116 3.2133 1.9597 0.84456 0.27447 0 0.5401 0 0 0.54298 A V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.0313 16.295 1.2907 0.46855 1.1393 0.68352 0.19311 2690.4 0.75 1.11 300 fA mA V fF V eV K 0.012081 A 0.094971 fA 0.075977 - All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fur Mobil-und Satellitenfunktechnik (IMST) (c) 1996 SIEMENS AG Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = 0.85 0.51 0.69 0.61 0 0.49 73 84 165 nH nH nH nH nH nH fF fF fF Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Dec-12-1996 BFT 93 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 400 mW Ptot 300 250 TS 200 150 TA 100 50 0 0 20 40 60 80 100 120 C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 10 2 K/W RthJS 10 2 Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 5 Dec-12-1996 BFT 93 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 2.0 pF 6.0 10V GHz 5.0 8V Ccb 1.6 1.4 fT 4.5 4.0 5V 1.2 1.0 0.8 0.6 0.4 3.5 3.0 2.5 2.0 3V 2V 1V 1.5 0.7V 1.0 0.2 0.0 0 4 8 12 16 V 24 0.5 0.0 0 10 20 30 40 mA IC 60 VR Power Gain Gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 12 10V dB 5V 10 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 7.0 dB 6.0 10V 8V 5V 3V G 9 8 7 6 5 4 3 3V 2V G 5.5 5.0 4.5 4.0 3.5 3.0 2V 1V 2.5 2.0 1.5 2 0.7V 1 0 0 10 20 30 40 mA IC 60 1.0 0.5 0.0 0 10 20 30 0.7V 40 1V mA IC 60 Semiconductor Group 6 Dec-12-1996 BFT 93 Power Gain Gma, Gms = f(VCE):_____ |S21 |2 = f(VCE):--------- Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) f = Parameter 12 dB 10 VCE = Parameter, f = 900MHz 28 8V dBm 3V IC=30mA 0.9GHz 0.9GHz G 9 8 7 1.8GHz 6 5 4 3 2 1 0 0 2 4 6 8 V 12 1.8GHz IP3 24 2V 22 20 18 16 14 12 10 0 1V 5 10 15 20 25 30 35 V CE 40 mA 50 IC Power Gain Gma, Gms = f(f) VCE = Parameter 30 Power Gain |S21|2= f(f) VCE = Parameter 28 dB IC=30mA IC=30mA dB 24 G 22 S21 22 20 18 18 16 14 12 14 10 10 8 6 10V 2V 1V 3.5 6 4 2 0 -2 0.0 0.7V 1V 0.5 1.0 1.5 2.0 2V 2.5 10V 2 0.7V -2 0.0 0.5 1.0 1.5 2.0 2.5 GHz f GHz f 3.5 Semiconductor Group 7 Dec-12-1996 |
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